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SAMSUNG 980 1TB M.2 NVME SSD

Samsung
Availability:

Out of stock


SAMSUNG | NVME   |  1TB

රු41,000 රු49,000

Out of Stock

Brand

Samsung

Product Filter

NVMe

Capacity

1TB

Solid-State-Drive
Capacity: 1 TB (1024 GB)
Variants: 250 GB 500 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: Sep-20
Price at Launch: 130 USD
Part Number: MZ-V8V1T0BW
Market: Consumer
Physical
Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.4
Power Draw: 0.05 W (Idle)
4.6 W (Avg)
5.1 W (Max)
Controller
Manufacturer: Samsung
Name: Pablo (S4LR033)
Architecture: ARM 32-bit Cortex-R
Foundry: Samsung FinFET
Flash Channels: 4 @ 1,200 MT/s
Core Count: Dual-Core
Process: 14 nm
Chip Enables: 4
Controller Features: HMB (enabled)
NAND Flash
Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 8 Tbit
Toggle: 4
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance: 3000 P/E Cycles
(up to)
Page Size: 16 KB
DRAM Cache
Type: None
Host-Memory-Buffer (HMB): 64 MB
Performance
Sequential Read: 3,500 MB/s
Sequential Write: 3,000 MB/s
Random Read: 480,000 IOPS
Random Write: 500,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 160 GB
(dynamic only)
Speed when Cache Exhausted: approx. 430 MB/s

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