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SAMSUNG 990 PRO 1TB M.2 NVME SSD

Samsung
Availability:

Out of stock


SAMSUNG | NVME   |  1TB | 990 PRO

රු36,400 රු42,000

Out of Stock

Brand

Samsung

Product Filter

NVMe

Capacity

1TB

Solid-State-Drive
Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB
Hardware Versions: Pascal + V7
1 TB 2 TB
Pascal + V8
4 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Aug 24th, 2022
Price at Launch: 179 USD
Part Number: MZ-V9P1T0CW
Market: Consumer
Physical
Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 2.0
Power Draw: 0.05 W (Idle)
Unknown (Avg)
7.8 W (Max)
Controller
Manufacturer: Samsung
Name: Pascal (S4LV008)
Architecture: ARM 32-bit Cortex-R8
Foundry: Samsung FinFET
Flash Channels: 8 @ 2,000 MT/s
Process: 8 nm
Chip Enables: 8
Controller Features: DRAM (enabled)
NAND Flash
Manufacturer: Samsung
Name: V-NAND V7
Part Number: K90UGY8J5D-CCK0
Type: TLC
Technology: 176-layer
Speed: 2000 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 5
Topology: Charge Trap
Die Size: 60 mm²
(8.5 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 191 per NAND String
92.1% Vertical Efficiency
Read Time (tR): 40 µs
Program Time (tProg): 347 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 1600 MB/s
Die Write Speed: 184 MB/s
Page Size: 16 KB
DRAM Cache
Type: LPDDR4-1866
Name: SAMSUNG K4F8E164HM-BGCJ
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16
Performance
Sequential Read: 7,450 MB/s
Sequential Write: 6,900 MB/s
Random Read: 1,200,000 IOPS
Random Write: 1,550,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 114 GB
(108 GB Dynamic
+ 6 GB Static)
Features
TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption: AES-256
TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

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